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磷化銦InP單晶襯底片，高質量大直徑低位錯磷化銦單晶是第二代半導體材料。包含2寸，3寸，4寸，6寸等不同規(guī)格產品。 InP single crystal substrate sheet, high quality large diameter low misp indium single crystal is the second generation semiconductor material.Including 2 inches, 3 inches, 4 inches, 6 inches and other products of different specifications.

磷化銦InP外延片，高質量大直徑低位錯磷化銦單晶是第二代半導體材料。包含2寸，3寸，4寸,6寸等不同規(guī)格產品。 InP epitaxial wafer, high quality large diameter low misp indium single crystal is the second generation semiconductor material.Including 2 inches, 3 inches, 4 inches,6 inches and other products of different specifications.

GaAs具有很高的電子遷移率，故可用于制備高速或微波半導體器件。砷化鎵還用于制作耐高溫、抗輻照或低噪聲器件，以及近紅外發(fā)光和激光器件，也用于作光電陰極材料等，以成為超高速半導體集成電路的基礎材料。 GaAs has high electron mobility and can be used to fabricate high speed or microwave semiconductor devices.Gallium arsenide is also used to make high temperature, radiation resistance or low noise devices, as well as near infrared luminescence and laser devices, as well as photocathode materials, etc., in order to become the basis of ultra-high-speed semiconductor integrated circuits.